Amplifier
Bipolar Transistor
FET Field Effect Transistor
Tubes
Bipolar Transistor
FET Field Effect Transistor
Tubes
Basic Qualification Question Bank for Amateur Radio Operator Certificate Examinations 12 June, 2014
Active Devices
Amplifier
Bipolar Transistor
FET Field Effect Transistor
Tubes
Amplifier
(D)
B-004-001-001 A circuit designed to increase the level of its input signal is called:
A a modulator
B an oscillator
C a receiver
D an amplifier
(A)
B-004-001-002 If an amplifier becomes non-linear, the output signal would:
A become distorted
B be saturated
C cause oscillations
D overload the power supply
(D)
B-004-001-003 To increase the level of very weak radio signals from an antenna, you would use:
A an RF oscillator
B an audio oscillator
C an audio amplifier
D an RF amplifier
(C)
B-004-001-004 To increase the level of very weak signals from a microphone you would use:
A an RF amplifier
B an audio oscillator
C an audio amplifier
D an RF oscillator
(C)
B-004-001-005 The range of frequencies to be amplified by a speech amplifier is typically:
A 300 to 1000 Hz
B 40 to 40 000 Hz
C 300 to 3000 Hz
D 3 to 300 Hz
(B)
B-004-001-006 Which of the following is not amplified by an amplifier?
A Voltage
B Resistance
C Current
D Power
(B)
B-004-001-007 The increase in signal level by an amplifier is called:
A modulation
B gain
C attenuation
D amplitude
(C)
B-004-001-008 A device with gain has the property of:
A oscillation
B modulation
C amplification
D attenuation
(A)
B-004-001-009 A device labelled "Gain = 10 dB" is likely to be an:
A amplifier
B attenuator
C oscillator
D audio fader
(D)
B-004-001-010 Amplifiers can amplify:
A current, power, or inductance
B voltage, power, or inductance
C voltage, current, or inductance
D voltage, current, or power
(B)
B-004-001-011 Which of the following is not a property of an amplifier?
A Distortion
B Loss
C Gain
D Linearity
(B)
B-004-003-001 Which component can amplify a small signal using low voltages?
A A multiple-cell battery
B A PNP transistor
C A variable resistor
D An electrolytic capacitor
(D)
B-004-003-002 The basic semiconductor amplifying device is the:
A tube
B P-N junction
C diode
D transistor
Bipolar Transistor
(C)
B-004-003-003 The three leads from a PNP transistor are named:
A collector, source and drain
B gate, source and drain
C collector, emitter and base
D drain, base and source
(B)
B-004-003-004 If a low level signal is placed at the input to a transistor, a higher level of signal is produced at the output lead. This effect is known as:
A rectification
B amplification
C detection
D modulation
(D)
B-004-003-005 Bipolar transistors usually have:
A 1 lead
B 2 leads
C 4 leads
D 3 leads
(B)
B-004-003-006 A semiconductor is described as a "general purpose audio NPN device". This would be:
A an audio detector
B a bipolar transistor
C a silicon diode
D a triode
(C)
B-004-003-007 The two basic types of bipolar transistors are:
A varicap and Zener types
B P and N channel types
C NPN and PNP types
D diode and triode types
(B)
B-004-003-008 A transistor can be destroyed in a circuit by:
A cut-off
B excessive heat
C excessive light
D saturation
(B)
B-004-003-009 In a bipolar transistor, the _____________compares closest to the control grid of a triode vacuum tube.
A collector
B base
C emitter
D source
(D)
B-004-003-010 In a bipolar transistor, the _____________compares closest to the plate of a triode vacuum tube.
A gate
B emitter
C base
D collector
(A)
B-004-003-011 In a bipolar transistor, the _____________ compares closest to the cathode of a triode vacuum tube.
A emitter
B collector
C base
D drain
FET Field Effect Transistor
(D)
B-004-004-001 The two basic types of field effect transistors(FET) are:
A NPN and PNP
B germanium and silicon
C inductive and capacitive
D N and P channel
(C)
B-004-004-002 A semiconductor having its leads labelled gate, drain, and source is best described as a:
A bipolar transistor
B silicon diode
C field-effect transistor
D gated transistor
(A)
B-004-004-003 In a field effect transistor, the ___________ is the terminal that controls the conductance of the channel.
A gate
B drain
C source
D collector
(D)
B-004-004-004 In a field effect transistor, the ___________is the terminal where the charge carriers enter the channel.
A gate
B drain
C emitter
D source
(B)
B-004-004-005 In a field effect transistor, the __________ is the terminal where the charge carriers leave the channel.
A gate
B drain
C collector
D source
(C)
B-004-004-006 Which semiconductor device has characteristics most similar to a triode vacuum tube?
A Zener diode
B Bipolar transistor
C Field effect transistor
D Junction diode
(C)
B-004-004-007 The control element in the field effect transistor is the:
A drain
B base
C gate
D source
(B)
B-004-004-008 If you wish to reduce the current flowing in a field effect transistor, you could:
A increase the forward bias gain
B increase the reverse bias voltage
C decrease the reverse bias voltage
D increase the forward bias voltage
(D)
B-004-004-009 The source of a field effect transistor corresponds to the _______ of a bipolar transistor.
A base
B drain
C collector
D emitter
(A)
B-004-004-010 The drain of a field effect transistor corresponds to the _______ of a bipolar transistor.
A collector
B base
C source
D emitter
(B)
B-004-004-011 Which two elements in a field effect transistor exhibit fairly similar characteristics?
A Source and base
B Source and drain
C Source and gate
D Gate and drain
Tubes
(C)
B-004-005-001 What is one reason a triode vacuum tube might be used instead of a transistor in a circuit?
A It is much smaller
B It uses lower voltages
C It may be able to handle higher power
D It uses less current
(C)
B-004-005-002 Which component can amplify a small signal but must use high voltages?
A An electrolytic capacitor
B A multiple-cell battery
C A vacuum tube
D A transistor
(C)
B-004-005-003 A feature common to triode tubes and transistors is that both:
A convert electrical energy to radio waves
B use heat to cause electron movement
C can amplify signals
D have electrons drifting through a vacuum
(C)
B-004-005-004 In a vacuum tube, the electrode that is operated with the highest positive potential is the _________.
A cathode
B grid
C plate
D filament(heater)
(B)
B-004-005-005 In a vacuum tube, the electrode that is usually a cylinder of wire mesh is the _______.
A plate
B grid
C filament(heater)
D cathode
(D)
B-004-005-006 In a vacuum tube, the element that is furthest away from the plate is the __________.
A grid
B emitter
C cathode
D filament(heater)
(C)
B-004-005-007 In a vacuum tube, the electrode that emits electrons is the __________.
A collector
B plate
C cathode
D grid
(D)
B-004-005-008 What is inside the envelope of a triode tube?
A Argon
B Air
C Neon
D A vacuum
(C)
B-004-005-009 How many grids are there in a triode vacuum tube?
A Three
B Three plus a filament
C One
D Two
Active Devices
Amplifier
Bipolar Transistor
FET Field Effect Transistor
Tubes
Amplifier
(D)
B-004-001-001 A circuit designed to increase the level of its input signal is called:
A a modulator
B an oscillator
C a receiver
D an amplifier
(A)
B-004-001-002 If an amplifier becomes non-linear, the output signal would:
A become distorted
B be saturated
C cause oscillations
D overload the power supply
(D)
B-004-001-003 To increase the level of very weak radio signals from an antenna, you would use:
A an RF oscillator
B an audio oscillator
C an audio amplifier
D an RF amplifier
(C)
B-004-001-004 To increase the level of very weak signals from a microphone you would use:
A an RF amplifier
B an audio oscillator
C an audio amplifier
D an RF oscillator
(C)
B-004-001-005 The range of frequencies to be amplified by a speech amplifier is typically:
A 300 to 1000 Hz
B 40 to 40 000 Hz
C 300 to 3000 Hz
D 3 to 300 Hz
(B)
B-004-001-006 Which of the following is not amplified by an amplifier?
A Voltage
B Resistance
C Current
D Power
(B)
B-004-001-007 The increase in signal level by an amplifier is called:
A modulation
B gain
C attenuation
D amplitude
(C)
B-004-001-008 A device with gain has the property of:
A oscillation
B modulation
C amplification
D attenuation
(A)
B-004-001-009 A device labelled "Gain = 10 dB" is likely to be an:
A amplifier
B attenuator
C oscillator
D audio fader
(D)
B-004-001-010 Amplifiers can amplify:
A current, power, or inductance
B voltage, power, or inductance
C voltage, current, or inductance
D voltage, current, or power
(B)
B-004-001-011 Which of the following is not a property of an amplifier?
A Distortion
B Loss
C Gain
D Linearity
(B)
B-004-003-001 Which component can amplify a small signal using low voltages?
A A multiple-cell battery
B A PNP transistor
C A variable resistor
D An electrolytic capacitor
(D)
B-004-003-002 The basic semiconductor amplifying device is the:
A tube
B P-N junction
C diode
D transistor
Bipolar Transistor
(C)
B-004-003-003 The three leads from a PNP transistor are named:
A collector, source and drain
B gate, source and drain
C collector, emitter and base
D drain, base and source
(B)
B-004-003-004 If a low level signal is placed at the input to a transistor, a higher level of signal is produced at the output lead. This effect is known as:
A rectification
B amplification
C detection
D modulation
(D)
B-004-003-005 Bipolar transistors usually have:
A 1 lead
B 2 leads
C 4 leads
D 3 leads
(B)
B-004-003-006 A semiconductor is described as a "general purpose audio NPN device". This would be:
A an audio detector
B a bipolar transistor
C a silicon diode
D a triode
(C)
B-004-003-007 The two basic types of bipolar transistors are:
A varicap and Zener types
B P and N channel types
C NPN and PNP types
D diode and triode types
(B)
B-004-003-008 A transistor can be destroyed in a circuit by:
A cut-off
B excessive heat
C excessive light
D saturation
(B)
B-004-003-009 In a bipolar transistor, the _____________compares closest to the control grid of a triode vacuum tube.
A collector
B base
C emitter
D source
(D)
B-004-003-010 In a bipolar transistor, the _____________compares closest to the plate of a triode vacuum tube.
A gate
B emitter
C base
D collector
(A)
B-004-003-011 In a bipolar transistor, the _____________ compares closest to the cathode of a triode vacuum tube.
A emitter
B collector
C base
D drain
FET Field Effect Transistor
(D)
B-004-004-001 The two basic types of field effect transistors(FET) are:
A NPN and PNP
B germanium and silicon
C inductive and capacitive
D N and P channel
(C)
B-004-004-002 A semiconductor having its leads labelled gate, drain, and source is best described as a:
A bipolar transistor
B silicon diode
C field-effect transistor
D gated transistor
(A)
B-004-004-003 In a field effect transistor, the ___________ is the terminal that controls the conductance of the channel.
A gate
B drain
C source
D collector
(D)
B-004-004-004 In a field effect transistor, the ___________is the terminal where the charge carriers enter the channel.
A gate
B drain
C emitter
D source
(B)
B-004-004-005 In a field effect transistor, the __________ is the terminal where the charge carriers leave the channel.
A gate
B drain
C collector
D source
(C)
B-004-004-006 Which semiconductor device has characteristics most similar to a triode vacuum tube?
A Zener diode
B Bipolar transistor
C Field effect transistor
D Junction diode
(C)
B-004-004-007 The control element in the field effect transistor is the:
A drain
B base
C gate
D source
(B)
B-004-004-008 If you wish to reduce the current flowing in a field effect transistor, you could:
A increase the forward bias gain
B increase the reverse bias voltage
C decrease the reverse bias voltage
D increase the forward bias voltage
(D)
B-004-004-009 The source of a field effect transistor corresponds to the _______ of a bipolar transistor.
A base
B drain
C collector
D emitter
(A)
B-004-004-010 The drain of a field effect transistor corresponds to the _______ of a bipolar transistor.
A collector
B base
C source
D emitter
(B)
B-004-004-011 Which two elements in a field effect transistor exhibit fairly similar characteristics?
A Source and base
B Source and drain
C Source and gate
D Gate and drain
Tubes
(C)
B-004-005-001 What is one reason a triode vacuum tube might be used instead of a transistor in a circuit?
A It is much smaller
B It uses lower voltages
C It may be able to handle higher power
D It uses less current
(C)
B-004-005-002 Which component can amplify a small signal but must use high voltages?
A An electrolytic capacitor
B A multiple-cell battery
C A vacuum tube
D A transistor
(C)
B-004-005-003 A feature common to triode tubes and transistors is that both:
A convert electrical energy to radio waves
B use heat to cause electron movement
C can amplify signals
D have electrons drifting through a vacuum
(C)
B-004-005-004 In a vacuum tube, the electrode that is operated with the highest positive potential is the _________.
A cathode
B grid
C plate
D filament(heater)
(B)
B-004-005-005 In a vacuum tube, the electrode that is usually a cylinder of wire mesh is the _______.
A plate
B grid
C filament(heater)
D cathode
(D)
B-004-005-006 In a vacuum tube, the element that is furthest away from the plate is the __________.
A grid
B emitter
C cathode
D filament(heater)
(C)
B-004-005-007 In a vacuum tube, the electrode that emits electrons is the __________.
A collector
B plate
C cathode
D grid
(D)
B-004-005-008 What is inside the envelope of a triode tube?
A Argon
B Air
C Neon
D A vacuum
(C)
B-004-005-009 How many grids are there in a triode vacuum tube?
A Three
B Three plus a filament
C One
D Two
